p-type silicon
英 [piː taɪp ˈsɪlɪkən]
美 [piː taɪp ˈsɪlɪkən]
网络 型矽; p型矽
双语例句
- Large Size P-type Silicon Microchannel Plates Prepared by Photo-Electrochemical Etching
由光辅助电化学刻蚀制备大面积p型硅微通道板 - Degradation of Metal-Induced Laterally Crystallized p-Type Polycrystalline Silicon Thin Film Transistors under DC Bias Stress
p型金属诱导横向结晶多晶硅TFT直流应力下的退化研究 - The smallest unit that supports electron flow in a semiconductor material; a hole in P-type silicon or a free electron in N-type silicon.
在半导体材料中维持电流的最小单元，在P型硅中是空穴，在N型硅中是自由电子。 - Experimental Research of Influence on Interelectrode Resistance of P-type Silicon with Different Conduction Mode
进电方式对P型硅极间电阻影响的试验研究 - Positron-lifetime and infrared absorption spectra measurement is made on neutron-irradiated CZ p-type silicon wafers in the temperature range 90K to 300K. It is found that the defects in silicon created by neutron irradiation are divacancies and vacancy oxygen complexes.
在90～300K温区范围内测试了中子辐照直拉硅单晶的正电子寿命谱及红外光谱，发现直拉硅单晶的中子辐照缺陷主要是双空位和氧-空位复合体。 - Study on the lifetime improvement of p-type high-resistance silicon single crystal materials
P型高阻硅单晶材料的寿命初探 - I-V characteristics of p-type Silicon electrode in HF solutions with different concentrations and electrochemical potential transients under galvanostatic condition, which accurately reflect the early-stage nucleation process of PS, were monitored by the electrochemical workstation ( CHI660A).
采用电化学工作站（CHI660A）监测p型硅电极在不同浓度HF溶液中的电流-电压特性，记录恒电流情况下硅电极的电压变化。这些曲线可从精确反映多孔硅形成的早期成核过程。 - An Investigation on the Process of Laser Induced Electrodeposition of Copper on p-type Silicon
铜在p-Si上激光诱导电沉积过程的研究 - Photoelectric conversion in PN junction of high-pure P-type silicon
高阻P型硅PN结中的光电转换 - High Conductive p-type Microcrystalline Silicon with High Crystallinity Prepared by High-pressure RF-PECVD
采用高压RF-PECVD法制备高电导、高晶化率的p型微晶硅材料 - Transition line series of both boron acceptor and phosphorus donor in p-type high-purity silicon have been observed simultaneously with the excitation of intrinsic light.
施加本征激发光后在P型高纯Si中同时观察到B受主和P施主的跃迁谱线系。 - Laser is used as active light source for the first time in photoeleotrochemioal image deposition on P-type silicon substrate, and pictures with clear structures are obtained.
本文首次用激光作激励光源，在P型硅片上成功地进行了光电化学成像沉积，得到层次清晰的图像。 - Experimental results show that p-type silicon crystals with phosphorus impurity compensation higher than 7% are susceptible to inversion by pulsed laser irradiation when the amount of impurity compensation increases and the distribution of impurity compensation changes.
实验结果表明：脉冲激光辐照之后补偿杂质浓度增加，补偿杂质磷分布发生变化，杂质补偿度大于7%的样品在被激光辐照的区域较容易转变为n型导电。 - Nitrogen doped fluorinated diamond-like carbon ( FN-DLC) films were deposited on p-type silicon wafers under different deposition conditions.
不同条件下，在单晶硅基片上沉积了含氮氟化类金刚石（FN-DLC）薄膜。 - P-type Silicon crystal plates have been adopted in the paper. Then the electrochemical etching experiments are done in three electrodes electrobath.
本文采用P型单晶硅片，在三极电解槽中，进行了电化学深刻蚀的探索性实验。 - Laser-Induced Selective Deposition of Nickel on p-Type Silicon
p型硅片上激光诱导局部化学沉镍 - This paper studies the properties of the mechanical deformation of N-type and P-type monocrystal silicon under external load.
本文的目的在于研究n型和p型硅单晶材料在外荷载作用下的变形性质。 - Preparation of Nickel Phosphorous Amorphous Film Catalyst by Electrodeposition on p-type Silicon
p-Si上电沉积制备镍-磷非晶薄膜催化剂 - The results about highly-crystallized, highly-conductive p-type microcrystalline silicon(μ c-Si: H) prepared by high-pressure RF-PECVD are reported in this paper.
本文报道了采用高压射频等离子体增强化学气相沉积（RF-PECVD）方法制备高电导、高晶化率的p型微晶硅材料的结果。 - Microstructural analysis of 1-D photonic crystal based on p-type porous silicon
基于p型多孔硅的一维光子晶体的微结构分析 - The fabrication and characteristics of ultra-high purity p-type silicon detector at room temperature
超纯P型硅探测器的制备和室温特性 - The hyperfine interaction between nucleons and holes of silicon, and the nuclear magnetic relaxation in the p-type silicon
硅中空穴与核的超精细作用及p型硅的核磁弛豫 - The temperature dependence of hole capture cross section of gold in p-type silicon was studied by capacitance transient technique.
我们用电容瞬态技术研究了P型硅中金的空穴俘获截面与温度的关系。 - Behavior of gold in the Si/ SiO2 interface region has been investigated using deep level transient spectroscopy ( DLTS) in the MOS structures made on p-type silicon wafers with < 111> orientation.
用深能级瞬态谱（DLTS）技术详细研究了金在p型<111>晶向硅MOS结构Si/SiO2界面区中的行为。 - Increase in catalyst concentration or silicon dioxide replacing P-type silicon as substrate could lead to denser SWNTs, shorter SWNTs and decrease in erect SWNTs on surface.
研究表明，催化剂浓度升高或采用二氧化硅替代P型硅为生长基底时，都会导致单壁碳纳米管生长的密度加大，而碳纳米管长度变短且更易贴附基底表面生长； - Compared with the behaviors of Pt nanoparticles-assisted etching of heavily doped P-type monocrystalline silicon, significant differences can be obtained, which means doping levels can affect the etching properties of P-type monocrystalline silicon.
这与Pt纳米颗粒催化刻蚀重掺杂P型单晶硅的实验结果有很大的差别，表明了掺杂浓度会影响Pt颗粒对P型单晶硅的催化刻蚀特性。 - In this thesis, p-type Porous Silicon was obtained by conventional electrochemical anodization.
本文采用传统的电化学阳极腐蚀法制备p型多孔硅。 - It is of great scientific importance and practical value for investigation of a-Si: H/ c-Si heterojunction solar cells on p-type crystalline silicon.
P型衬底a-Si：H/c-Si异质结太阳能电池具有重要的科学意义和应用价值。